콘텐츠 본문
논문 해외 국제전문학술지(SCI급) High mobility top-gated poly(3-hexylthiophene) field-effect transistors with high work-function Pt electrodes
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2010-01
- 저자명 Kang-Jun Baeg, Dongyoon Khim, Dong-Yu Kim, Jae Bon Koo, In-Kyu You, Won San Choi, Yong-Young Noh
- 학술지명 Thin Solid Film
- 발행처명 ELSEVIER
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 7
- 논문 다운로드 링크(외부) https://doi.org/10.1016/j.tsf.2010.01.026
- 연구분야 공학 > 화학공학
논문 초록 (Abstract)
We report high-performance top-gated organic field-effect transistors (OFETs) with regio-regular poly(3-hexylthiophene) (rr-P3HT). The high charge carrier mobility in rr-P3HT FETs (0.4 cm2/Vs) was achieved due to the relatively low contact resistance and high crystallinity of rr-P3HT films. The contact resistance was controlled mainly through the use of high work-function platinum (Pt) (5.6 eV) for the charge injection electrode and a top-gate, bottom-contact geometry that enabled an enhanced current injection via current crowding in the staggered device structure. Moreover, the top-gate configuration provided improved device stability in air ambient conditions via the presence of a gate dielectric and gate electrode on top of the organic semiconductor.
