콘텐츠 본문
논문 국내 국내전문학술지(KCI급) UV/O3 와 ECR 플라즈마를 이용한 wafer storage box 로부터 발생하는 Si 웨이퍼 표면 위의 유기오염물 제거
- 학술지 구분 국내전문학술지(KCI급)
- 게재년월 2002-07
- 저자명 최균석(Kyun Suk Choi),임종민(Jong Min Lim),이종무(Chong Mu Lee),나관구(Gwan Goo Rha),박상준(Sang Joon Park)*
- 학술지명 대한금속재료학회
- 발행국가 국내
- 논문언어 한국어
논문 초록 (Abstract)
The problem of organic contamination is still there due to the outgassing from the plastic materials in the storage boxes. Such organic contaminants have deleterious effects not only on the gate oxide integrity, but also on the chemical vapor deposition steps. In this paper, we report the experimental results for the removal of the organic contaminants existing on wafer surfaces by UV/O_3 cleaning, ECR H_2 plasma and ECR O_2 plasma cleaning. After cleaning, Si wafers were analyzed by Attenuated Total Reflection Fourier Transform Infrared Spectroscopy (ATR-FTIR) and Atomic Force Microscrope(AFM). The ECR oxygen plasma cleaning technique seems to be more effective than the ECR hydrogen plasma or the UV/O_3 cleaning technique for the removal of organic contaminants. Also, organic contaminants removal mechanisms of UV/O_3 cleaning, ECR H_2 plasma and ECR O_2 plasma cleaning are discussed.
