콘텐츠 본문
논문 국내 국제전문학술지(SCI급) Removal of Cr and Zn impurities from the Si substrate using the remote plasma H2
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2001-07
- 저자명 Choi, K (Choi, K) ; Lee, CM* (Lee, CM)
- 학술지명 J. Korean Phys. Soc.
- 발행국가 국내
- 논문언어 외국어
논문 초록 (Abstract)
In this communication, we report our experimental results on the removal of the organic contaminants existing on the surface of silicon wafers by a dry cleaning method using ECR plasma. After cleaning, Si wafers were characterized by Attenuated Total Reflection-Fourier Transform Infrared Spectroscopy (ATR-FTIR) and Atomic Force Microscropy (AFM). In ECR hydrogen plasma cleaning, the RMS surface roughness reduced significantly with increasing the exposure time but the removal of organic contaminants from tire silicon wafer was not very effective. In ECR oxygen plasma cleaning, the plasma exposure times to reach both the detection limit and the lowest RMS roughness were 40 and 10 sec, respectively and the optimum plasma exposure time is suggested to be 30 similar to 40 sec, considering both the effects of cleaning and surface roughening. Therefore, dry cleaning using ECR oxygen plasma seems to be more effective than that using ECR hydrogen plasma for the removal of organic contaminants.
