콘텐츠 본문
논문 해외 국제전문학술지(SCI급) INTERFACIAL DOPING FOR EFFICIENT CHARGE INJECTION IN ORGANIC SEMICONDUCTORS
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2012-08
- 저자명 이재현
- 학술지명 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- 발행처명 WILEY-V C H VERLAG GMBH
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 2
논문 초록 (Abstract)
nterfacial doping in organic semiconductors (OSs) is an important technique to achieve efficient organic electronic devices. In this paper, we discuss how the charge injection into an OS can be enhan ced by the insertion of a thin interfacial layer or an electrically do ped OS layer between an electrode and an undoped OS. We present that t he vacuum level shift and Fermi level modification by the electrical doping is the origin of the efficient charge injection through a metalorganic junction and an organicorganic junction. Applicatio n to organic electronics such as organic light-emitting diodes (OLEDs )and organic photovoltaics (OPVs) is briefly summarized.
