콘텐츠 본문
논문 해외 국제전문학술지(SCI급) DOPING-CONCENTRATION-DEPENDENT HOLE MOBILITY IN A REO3 DOPED ORGANIC SEMICONDUCTOR OF 4,4 ',4 ''-TRIS(N-(2-NAPHTHYL)-N-PHENYL-AMINO)-TRIPHENYLAMINE
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2013-05
- 저자명 이재현
- 학술지명 APPLIED PHYSICS LETTERS
- 발행처명 AMER INST PHYSICS
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 4
논문 초록 (Abstract)
The effect of electrical doping on the hole carrier mobility in a p-doped organic semiconductor is reported. We focus on the ohmic current region where the density of carriers generated by doping is much higher than that of injected carriers. We can therefore ana lyze the effect of doping on the charge-carrier mobility, excluding t he effect of the injected charge-carrier density and the electric f ield. The hole mobility decreases as the doping concentration increase s, indicating that the negatively charged dopants form Coulomb trap s that disturb hole transport in the p-doped organic system. The activa tion energy of the mobility increases as the doping concentration inc reases, consistent with a broadening of the Gaussian density-of-states distribution by the negatively charged dopants. (C) 2013 AIP P ublishing LLC.
