콘텐츠 본문
논문 해외 국제전문학술지(SCI급) SUBSTRATE TEMPERATURE EFFECT ON THE SIC PASSIVATION LAYER SYNTHESIZED BY AN RF MAGNETRON SPUTTERING METHOD
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2011-08
- 저자명 정연호공동(참여),CHOI, WS (CHOI, WON SEOK),PARK, Y (PARK, YOUNG),SEO, JK (SEO, JAE KEUN)
- 학술지명 THIN SOLID FILMS
- 발행처명 ELSEVIER SCIENCE SA
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 4
논문 초록 (Abstract)
This paper describes amorphous silicon carbide (a-SiC) film as an alternative material to silicon nitride (SiN) and silicon oxide (SiO2) for the passivation layer of solar cells. We deposited the film on p-type silicon (100) wafers and glass substrates by RF magnetron sputtering using a SiC (99%) target. Structural and optical properties of the films were investigated according to the process temperature (room temperature, 300 °C, 400 °C, 500 °C and 600 °C). The structural properties were analyzed by Raman microscopy and XPS (X-ray Photoelectron Spectroscopy). The XPS showed that the content of SiC in the film is increased when the substrate temperature is higher. The optical properties of the films were examined by UV–visible spectroscopy and Ellipsometer. The optical characteristic measurement showed that the lowest refractive index of the film is 2.65. Also, using carrier lifetime measurement, we investigated the performance of SiC as the passivation layer. At the substrate temperature of 600 °C, we obtained a highest carrier lifetime of 7.5 μs.
