콘텐츠 본문
논문 해외 국제전문학술지(SCI급) SIC FORMATION FOR A SOLAR CELL PASSIVATION LAYER USING AN RF MAGNETRON CO-SPUTTERING SYSTEM
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2012-01
- 저자명 CHOI, WS (CHOI, WON SEOK),KANG, HI (KANG, HYUN IL),LEE, HS (LEE, HAE-SEOK),KIM, JH (KIM, JUNG HYUN),LEE, J (LEE, JAEHYUNG),정연호공동(제1)
- 학술지명 NANOSCALE RESEARCH LETTERS
- 발행처명 SPRINGER
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 6
논문 초록 (Abstract)
In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement.
