콘텐츠 본문
논문 해외 국제전문학술지(SCI급) POST-ANNEALING EFFECT ON THE A-SICX PASSIVATION LAYER SYNTHESIZEDWITH
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2015-07
- 저자명 정연호공동(제1),유진수,최원석,강현일,강필순
- 학술지명 THIN SOLID FILMS
- 발행처명 ELSEVIER SCIENCE SA
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 5
논문 초록 (Abstract)
The amorphous silicon carbide (a-SiC) film has been considered a good candidate for the rear passivation layer of the high-efficiency silicon solar cell. We describe the results of the post-annealing of an amorphous silicon carbide (a-SiC) film deposited using the radio frequency magnetron sputtering method. The post-annealing was performed with rapid thermal annealing process in three different chamber environments: nitrogen (N2), oxygen (O2), and hydrogen (H2). After the annealing process, the characteristic properties of the films were investigated in several categories. The transmittance of the film was measured with Scinco s-3100 at the 400–800 nm wavelength. The average transmittance increased after the annealing treatment, and the highest transmittance was achieved with the H2 ambient. Using a silicon wafer lifetime tester, we measured the carrier lifetime of the films. We found that the carrier lifetime was highest in the N2 ambient annealing process. Also, the refractive index was determined using an ellipsometer. The measurement indicated that the refractive index of the film decreased in the annealing process, unlike that of the as-deposited film.
