콘텐츠 본문
논문 해외 국제전문학술지(SCI급) REACTION GAS RATIO EFFECT ON THE GROWTH OF A DIAMOND FILM USING MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2016-05
- 저자명 CHOI, WS (CHOI, W. S.),SONG, BS (SONG, B. -S.),LEE, S (LEE, S.),LEE, J (LEE, J.),KANG, H (KANG, H.),KANG, FS (KANG, F. -S.),JOUNG, YH (JOUNG, Y. -H.)공동(제1),HONG, B (HONG, B.),CHOI, YK (CHOI, Y. -K.)
- 학술지명 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- 발행처명 AMER SCIENTIFIC PUBLISHERS
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 9
논문 초록 (Abstract)
In this study, diamond films were prepared using the microwave plasma-enhanced chemical vapor deposition (PECVD) system, which included a DC bias system to enhance the nucleation of the films. The films were synthesized on Si wafers with different ratios of methane (CH4) and hydrogen (H2) gases. We have studied the effects of the CH4-to-H2 ratio on the structural and optical properties of diamond films. The thickness and surface profile of the films were characterized via field emission scanning electron microscopy (FE-SEM). Raman was used to investigate the structural properties of the diamond films. The refractive indexes as functions of the CH4-to-H2 ratio were measured using an ellipsometer. The FE-SEM analysis showed that the 3 and 5 sccm CH4 created diamond films. The Raman analysis indicated that a nanocrystalline diamond film was formed at 3 sccm; a general diamond film, at 5 sccm; and films similar to the a-C:H film, at 7 sccm. The ellipsometer measurement showed that the refractive index of the synthesized diamond film was around 2.42 at 3 sccm. This value decreased as the CH4 volume increased.
