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논문 국내 국제전문학술지(SCI급) Computational Design of Highly Efficient and Robust Hole Transport Layers in Perovskite Solar Cells

  • 학술지 구분 국제전문학술지(SCI급)
  • 게재년월 2019-08
  • 저자명 홍기하,정중희,정지영,송동준,최지혜
  • 학술지명 KOREAN JOURNAL OF METALS AND MATERIALS
  • 발행처명 KOREAN INST METALS MATERIALS
  • 발행국가 국내
  • 논문언어 한국어
  • 전체저자수 5

논문 초록 (Abstract)

We investigated the effects of materials and the film thickness of hole transport layers (HTLs) on inverted type perovskite solar cells using optics-charge transport coupled simulations. Power conversion efficiencies (PCEs), and the variations in efficiency induced by the film thickness dispersion, were intensively studied, to compare potential HTLs candidates like NiOx, PEDOT:PSS, CuSCN, and CuI. The optimum thickness of the solar cell layers differed based on the chosen combination of HTL and perovskite. It is suggested that the optoelectronic properties of HTLs like band gap, extinction coefficient, and refractive index can be used to determine the best ideal efficiencies, and sensitivity to process fluctuation. CuSCN showed the most promising behaviors, in that it can produce over-25% PCEs, and the lowest efficiency dispersion for various HTL thickness conditions. The best performance by CuSCN can be ascribed to its having a proper refractive index with the perovskite layer, and wide band gap characteristic. NiOx and CuI showed PCEs comparable to the CuSCN, but their efficiencies were sensitive to the varying thickness of the HTL. PEDOT:PSS exhibited the lowest simulated PCEs due to its small band gap. Our study suggests the best HTL candidates for inverted type perovskite solar cells, and demonstrates the importance of sophisticated numerical material studies, and device design, when developing highly efficient and robust perovskite solar cells.