콘텐츠 본문
논문 해외 국제전문학술지(SCI급) High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2008
- 저자명 Park, J,Park, Y,Kwon, KW,Lee, E,Jung, J,Lee, J,Hong, K공동(참여),Lee, S,Kim, KK,Yin, H,Song, I,Kim, C,Kim, S
- 학술지명 APPLIED PHYSICS LETTERS
- 발행처명 AMER INST PHYSICS
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 13
논문 초록 (Abstract)
Amorphous-gallium-indium-zinc-oxide (a -GIZO) thin filmtransistors (TFTs) are fabricated without annealing, using processes and equipment for conventional a-Si:H TFTs. It has been very difficult to obtain sound TFT characteristics, because the a -GIZO active layer becomes conductive after dry etching the Mo source/drain electrode and depositing the a-SiO2 passivation layer. To prevent such damages, N2O plasma is applied to the back surface of the a -GIZO channel layer before a-SiO2 deposition. N2O plasma-treated a -GIZO TFTs exhibit excellent electrical properties: a field effect mobility of 37cm2/Vs , a threshold voltage of 0.1V , a subthreshold swing of 0.25V /decade, and an Ion∕off ratio of 7
