콘텐츠 본문
논문 해외 국제전문학술지(SCI급) Asymmetric Doping in Silicon Nanostructures: The Impact of Surface Dangling Bonds
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2010-05
- 저자명 Hong, KH공동(제1),Chung, UI,Shin, J,Lee, JH,Kim, J
- 학술지명 NANO LETTERS
- 발행처명 AMER CHEMICAL SOC
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 5
논문 초록 (Abstract)
We investigate peculiar dopant deactivation behaviors of Si nanostrucures with first principle calculations and reveal that surface dangling bonds (SDBs) on Si nanostructures could be fundamental obstacles in nanoscale doping. In contrast to bulk Si, as the size of Si becomes smaller, SDBs on Si nanostructures prefer to be charged and asymmetrically deactivate n- and p-type doping. The asymmetric dopant deactivation in Si nanostructures is ascribed to the preference for negatively charged SDBs as a result of a larger quantum confinement effect on the conduction band. On the basis of our results, we show that the control of the growth direction of silicon nanowire as well as surface passivation is very important in preventing dopant deactivation.
