콘텐츠 본문
논문 해외 국제전문학술지(SCI급) Impacts of fluorine on GaN high electron mobility transistors: Theoretical study
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2010-11
- 저자명 Hong, KH공동(제1),Kim, J,Chung, UI,Shin, J,Oh, J,Choi, HS,Hwang, I
- 학술지명 PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
- 발행처명 Wiley & Sons
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 7
논문 초록 (Abstract)
We investigate the role of fluorine (F) in GaN-based high electron mobility transistors (HEMTs) with first principle calculations. Formation energy calculations of F in GaN and AlN reveal that energetically favored interstitial F (Fi) and substitutional F at N sites (FN) could play important roles in the performance of HEMTs. Fi is responsible for positive threshold voltage (Vth) shift by forming F– anion and depleting 2DEG carriers. The degradation of device performance at high temperature is ascribed to the defect energy state near conduction band edge of FN. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
