콘텐츠 본문
논문 해외 국제전문학술지(SCI급) EFFECTS OF OXYGEN PLASMA TREATMENT ON V-TH UNIFORMITY OF RECESSED-GATE ALGAN/GAN HEMTS
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2014-03
- 저자명 홍기하공동(교신),KIM, J (KIM, JONGSEOB),HWANG, I (HWANG, INJUN),CHOI, HS (CHOI, HYUK SOON)
- 학술지명 ELECTRONIC MATERIALS LETTERS
- 발행처명 KOREAN INST METALS MATERIALS
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 4
논문 초록 (Abstract)
Normally-off AlGaN/GaN HEMTs have been fabricated by employing a recessed-gate structure and oxygen plasma treatment and outstanding improvement of V th variation is observed. The origin of the observed positive V th shift and reduced variation window induced by oxygen plasma treatment is investigated by computational methods. Formation energy calculations for oxygen inclusions in III–N reveal that a negatively charged V Al -O N complex in the AlGaN passivation layer can be a major source of V th variation in AlGaN/GaN hetero-structured devices. Calculated trap energy levels are used as the parameters of a device simulation, which indicated that significant V th variation can be induced by a small fluctuation in the AlGaN layer thickness and defect densities. Our theoretical investigation shows that normally-off AlGaN/GaN HEMTs having reliable V th variation can be produced by oxygen inclusions accompanying a recessed-gate structure.
