콘텐츠 본문
논문 해외 국제전문학술지(SCI급) ATOMISTIC STUDY ON DOPANT-DISTRIBUTIONS IN REALISTICALLY SIZED, HIGHLY P-DOPED SI NANOWIRES
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2015-01
- 저자명 RYU, H (RYU, HOON),홍기하공동(교신),KIM, J (KIM, JONGSEOB)
- 학술지명 NANO LETTERS
- 발행처명 AMER CHEMICAL SOC
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 3
논문 초록 (Abstract)
The dependency of dopant-distributions on channel diameters in realistically sized, highly phosphorus-doped silicon nanowires is investigated with an atomistic tight-binding approach coupled to self-consistent Schrödinger–Poisson simulations. By overcoming the limit in channel sizes and doping densities of previous studies, this work examines electronic structures and electrostatics of free-standing circular silicon nanowires that are phosphorus-doped with a high density of ∼2 × 1019 cm–3 and have 12 nm−28 nm cross-sections. Results of analysis on the channel energy indicate that the uniformly distributed dopant profile would be hardly obtained when the nanowire cross-section is smaller than 20 nm. Insufficient room to screen donor ions and shallower impurity bands are the primary reasons of the nonuniform dopant-distributions in smaller nanowires. Being firmly connected to the recent experimental study (Proc. Natl. Acad. Sci. U.S.A.2009, 106, 15254–15258), this work establishes the first theoretical framework for understanding dopant-distributions in over-10 nm highly doped silicon nanowires.
