콘텐츠 본문
논문 해외 국제전문학술지(SCI급) CU(IN,GA)SE2 THIN FILM SOLAR CELLS WITH SOLUTION PROCESSED SILVER NANOWIRE COMPOSITE WINDOW LAYERS: BUFFER/WINDOW JUNCTIONS AND THEIR EFFECTS
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2017-10
- 저자명 JANG, J (JANG, JISEONG),CHUNG, CH (CHUNG, CHOONG-HEUI,YUN, JH (YUN, JAE HO),EO, YJ (EO, YOUNG-JOO),KIM, K (KIM, KIHWAN),SONG, S (SONG, SOOMIN),LEE, DK (LEE, DOH-KWON),HONG, KH (HONG, KI-HA)공동(참여),LEE, JS (LEE, JUN SU)
- 학술지명 SOLAR ENERGY MATERIALS AND SOLAR CELLS
- 발행처명 ELSEVIER SCIENCE BV
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 9
논문 초록 (Abstract)
We quantitatively and analytically investigate the properties of buffer/window junctions and their effects on the energy band alignment and the current-voltage characteristics of Cu(In,Ga)Se2 (CIGS) thin film solar cells with solution processed silver nanowire (AgNW) composite window layers. AgNWs are generally embedded in a moderately conductive matrix layer to ensure lateral collection efficiency of charge carriers photogenerated in the lateral gaps present between AgNWs. Studies on the junctions between a buffer and AgNW-composite window layers and their effects on the performances of CIGS thin film solar cells have seldom been addressed. Here, we show that solution processed AgNW-composite window layers could induce defect states at the buffer/window interface, resulting in poor energy band alignment impeding carrier transport in the solar cells. On the basis of our analysis, we suggest an analytical expression of cm to avoid losses in the power conversion efficiency of the solar cells. is the carrier concentration in a matrix layer embedding AgNWs, is the negative defect density at the buffer/window interface, and is the relative dielectric constant of the matrix layer embedding AgNWs.
