콘텐츠 본문
논문 해외 국제전문학술지(SCI급) Solution-Processed Dual Gate Ferroelectric–Ferroelectric Organic Polymer Field-Effect Transistor for the Multibit Nonvolatile Memory
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2021-10
- 저자명 Amos Amoako Boampong, 조재혁, 안현식, 김민회
- 학술지명 Advanced Electronic Materials
- 발행처명 WILEY-V C H VERLAG GMBH
- 발행국가 해외
- 논문언어 외국어
논문 초록 (Abstract)
The stable multibit storage operation of solution-processed organic nonvolatile memories (ONVMs) based on ferroelectric field-effect transistors (FeFETs) for high density data storage devices are demonstrated. The proposed multibit ONVM structure consists of a p-type polymer semiconductor sandwiched between poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] layers serving as ferroelectric gate insulators to form a dual gate ferroelectric–ferroelectric memory transistor (DG Fe-FeMT). With the extra memory space created by the spatially separated ferroelectrics, a 2-bit memory representation (“11”, “10”, “01” and “00”) with clear memory margins is achieved due to the bistability of each P(VDF-TrFE) and the high performance of the polymer semiconductor. The distinct four-level reading of memory output currents (IM,OUTs) results from the independent programming voltages of the dual gates. An excellent distinct six-level IM,OUTs are also achieved in DG Fe-FeMT using the intermediate programming voltages. Finally, the possibility of 3−bit, or 8 memory states, are demonstrated by optimizing the bistability and intermediate polarization states of the ferroelectrics without increasing the device area horizontally. The DG Fe-FeMT has a great potential for cost−effective flexible nonvolatile multibit data storage devices due to its solution-process and low annealing temperatures.
