콘텐츠 본문
논문 해외 국제전문학술지(SCI급) Interfacial effects of mo-based alloy electrodes on channel shortening and mobility extraction in oxide thin-film transistors
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2026-10
- 저자명 Seong-Jae Kim1, Hye-In Yeom1, Tae Kyu Nam, Jin Kim, Ji-Hwan Ha, Sang-Hee Ko Park, Jong Beom Ko*
- 학술지명 Surfaces and Interfaces
- 발행처명 ELSEVIER
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 7
- 논문 다운로드 링크(외부) 10.1016/j.surfin.2026.110429
- 연구분야 공학 > 재료공학
- 키워드 #thin-film devices #semiconductor #thin-film transistors
논문 초록 (Abstract)
This study investigates the impact of source/drain materials on channel shortening in back-channel-etched (BCE) oxide thin-film transistors (TFTs) employing an indium-tin-based oxide semiconductor. Molybdenum (Mo) and Molybdenum-aluminum-titanium (MoAlTi) electrodes are systematically compared to evaluate their effects on channel shortening and device performance. Combined electrical characterization and materials analyses indicate that MoAlTi electrodes induce stronger contact-related interfacial effects, resulting in more pronounced effective channel length reduction and consequent overestimation of field-effect mobility. Temperature-dependent TLM analysis suggests that thermally activated defect-mediated processes are involved in the observed channel shortening behavior, although the diffusing species cannot be uniquely identified from the activation energy alone. TEM and XPS analyses further support stronger interfacial oxidation and oxygen-vacancy-related bonding changes in the MoAlTi contact system compared to the Mo contact system. These findings underscore the necessity of accounting for effective channel length reduction in mobility extraction and highlight the critical role of electrode/oxide interfacial reactions in scaled oxide TFTs.
