콘텐츠 본문
논문 해외 국제전문학술지(SCI급) High-Mobility IZO Thin-Film Transistors Enabled by Precise Hydrogen Control Using a SiO2–Al2O3 Supercycle via Plasma-Enhanced Atomic Layer Deposition
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2025-11
- 저자명 Sunghwan Park, Seong-In Cho, Hwa Young Kim, Sang-Hee Ko Park*, Jong Beom Ko*
- 학술지명 ACS Applied Materials & Interfaces
- 발행국가 해외
- 논문언어 외국어
- 논문 다운로드 링크(외부) https://doi.org/10.1021/acsami.5c12926
논문 초록 (Abstract)
A precise strategy to control hydrogen incorporation is essential for achieving high-performance oxide thin-film transistors (TFTs) as hydrogen plays a key role in tuning carrier concentration and passivating defect states. In this study, we report a top-gate oxide thin-film transistor structure that utilizes a plasma-enhanced atomic layer deposition (PEALD) supercycled SiO2–Al2O3 gate insulator (GI), enabling precise hydrogen control through a tunable layering sequence. Hydrogen incorporation into the active channel is modulated with precise control by varying the number of hydrogen-rich SiO2 subcycles. Comprehensive analyses reveal that moderate hydrogen incorporation effectively passivates oxygen-related defects while introducing shallow donor states, enhancing mobility, and suppressing charge trapping. The optimized device with ten cycles of H-rich SiO2 exhibits a high field-effect mobility of 47.4 cm2/V·s, a turn-on voltage (Von) of −0.46 V, a subthreshold swing of 71.3 mV/dec and negligible hysteresis, an on/off current ratio of ∼107, and superior bias stability under positive and negative stress conditions. In contrast, excess hydrogen from 15 cycles leads to the loss of switching behavior caused by the intermixing of GI layers, resulting in uncontrolled hydrogen diffusion and excessive carrier generation. These results demonstrate that the PEALD supercycle process offers a reliable strategy for hydrogen modulation in oxide semiconductors, enabling an optimized trade-off between mobility and stability in high-performance TFTs.
